Mobile Semiconductor Introduces 28nm Memory Compiler Support

March 13, 2018 | By forimmediaterele | Filed in: Press Releases.

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SEATTLE, March 13, 2018 /PRNewswire/ — Mobile Semiconductor today announced the introduction of its new 28nm memory compilers available immediately.  Mobile Semiconductor’s silicon-proven embedded memory technology offers nine 28SLP GLOBALFOUNDRIES foundry sponsored compilers reaching all the way down to a 0.8V nominal power supply. Mobile Semiconductor also works with other top tier foundries delivering industry leading 28nm HPC+ memory solutions. These compilers are proven to be ideal for IoT and low power DSP applications.

These solutions are available in a range of architectures that include:

  • Low Voltage, Low Leakage, Low Power Family (LV)
  • Ultra Low Leakage, Low Power SRAM (ULL) Single Supply 0.8v Nominal
  • Ultra High Speed SRAM (UHS) up to 1.5GHz

Using voltage level translations, integrated power switches and Mobile Semiconductor’s proprietary ultra low leakage retention mode, the 28nm HPC+ compilers utilizes the high density ULL bit cell to give the end users the ideal solutions for low power applications. 

“Building upon our success in a series of industry leading memory compilers,” Founder and CEO Cameron Fisher said, “we are confident that our new 28nm compliers will enable a wide range of new designs in the exploding IoT market space.” 

Fisher continued, “Mobile Semiconductor is the leader in providing low power solutions and the low power compilers supports a deep sleep mode that allows many years of operation on a simple button cell battery.”

For more information please contact Mobile Semiconductor at

About Mobile Semiconductor:

Mobile Semiconductor is located in Seattle, Washington with a design center in Williston, Vermont. The company develops SRAM, ROM and Register File compilers optimized for applications requiring ultra-low power, low leakage or ultra-high performance.

Mobile Semiconductor’s customers differentiate their products by using our application-optimized SRAMs to meet their high performance and ultra-low power product requirements.

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SOURCE Mobile Semiconductor

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